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2SK2869(L), 2SK2869(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005
Features
Low on-resistance RDS = 0.033 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2))
4
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