2SK2928
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-551B (Z) 3rd. Edition Jun 1998 Features
• Low on-r...
2SK2928
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-551B (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.040Ω typ. 4V gate drive devices. High speed switching
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Source
2SK2928
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 60 ±20 15 60 15 15 19 40 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK2928
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown
voltage Gate to source breakdown
voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff
voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward
voltage Body–drain diode reverse recovery time Note: 4. Pulse test Symbol Min V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 60 ±20 — — 1.5 — — 7 — — — — — — — — — Typ — — — — — 0.040 0.060 11 500 260 110 10 80 ...