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2SK2960 Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number 2SK2960
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK2960 FEATURES ·Drain Current : ID= 10A@ T C=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resi stance : RDS(on) = 0.
52Ω(Max) @ VGS= 1 0V ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation DESC RIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 400 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain C urrent-Single Pluse 20 A .
Manufacture Inchange Semiconductor
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2SK2960

 

 

 


 

 

 

Part Number 2SK2960
Description Silicon N-Channel Power F-MOS FET
Feature Power F-MOS FETs 2SK2960 Silicon N-Chan nel Power F-MOS FET s Features q Avalan che energy capacity guaranteed: EAS > 2 50mJ q VGSS = ±30V guaranteed q High-s peed switching: tf = 55ns q No secondar y breakdown unit: mm 4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2 M Di ain sc te on na tin nc ue e/ d q Contactless relay q Diving circuit for a solenoid q Drivin g circuit for a motor q Control equipme nt q Switching power supply 15.
0±0.
3 4 .
1±0.
2 8.
0±0.
2 Solder Dip 3.
0±0.
2 s Applications 13.
7–0.
2 +0.
5 1.
2±0 .
15 1.
45±0.
15 0.
75±0.
1 2.
6±0.
1 0.
7 ±0.
1 s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Drain t .
Manufacture Panasonic
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2SK2960

 

 

 

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