2SK3000

2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004 Features www.DataSheet4U.com R Low on-resistance DS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) 4 V gate drive devices. Small package (MPAK) Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 1 1. Source 2. Gate 3. Drain 2 S Note: Marking is “ZY–”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings 40 ±10 1.0 4.0 1.0 400 150 –55 to +150 Unit V V A A A mW °C °C Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % t 2. When using the glass epoxy board (10 mm x 10 mm x 1 mm ) Rev.3.00, Jun.16.2004, page 1 of 6 2SK3000 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Drain to source voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance www.DataSheet4U.com Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Notes: 3. Pulse test Symbol V(BR)DSS VDS(SUS) V(BR)GSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Min 40 40 ±10 — — 1.1 ...