DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3060
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK3060...
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3060
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) Low Ciss: Ciss = 2400 pF TYP. Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3060
TO-220AB
2SK3060-S
TO-262
2SK3060-ZJ 2SK3060-Z
TO-263 TO-220SMDNote
Note This package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source
Voltage (VGS = 0 V)
VDSS
Gate to Source
Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source
Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC) Drain Current (Pulse) Note1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg IAS EAS
60 ±20 +20, −10 ±70 ±210 70 1.5 150 –55 to +150 35 122.5
V V V A A W W °C °C A mJ
(TO-220AB) (TO-262)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 5 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V
(TO-263, TO-220SMD)
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