2SK3112

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3112 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. ORDERING INFORMATION PART NUMBER 2SK3112 2SK3112-S 2SK3112-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZJ) FEATURES Gate voltage rating ±30 V Low on-state resistance RDS(on) = 110 mΩ MAX. (VGS = 10 V, ID = 13 A) Low input capacitance Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 200 ±30 ±25 ±75 100 1.5 150 −55 to +150 25 250 V V A A W W °C °C A mJ (TO-263) (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every...