2SK3131

2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications Fast reverse recovery time Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : trr = 105 ns (typ.) : RDS (ON) = 0.085 Ω (typ.) : |Yfs| = 35 S (typ.) Unit: mm Built-in high-speed free-wheeling diode : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 50 200 250 525 50 25 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA — — 2-21F1B Weight: 9.75 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.5 35.7 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 µH, RG = 25 Ω, IAR = 50 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 200...