DatasheetsPDF.com

2SK3132 Datasheet

Part Number 2SK3132
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3132 Datasheet2SK3132 Datasheet (PDF)

2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3132 Chopper Regulator DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 0.07 Ω (typ.) : |Yfs| = 33 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−s.

  2SK3132   2SK3132






Part Number 2SK3136
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel MOSFET
Datasheet 2SK3132 Datasheet2SK3136 Datasheet (PDF)

2SK3136 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G REJ03G1068-0400 (Previous: ADE-208-696B) Rev.4.00 Sep 20, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK3136 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain curren.

  2SK3132   2SK3132







Part Number 2SK3136
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3132 Datasheet2SK3136 Datasheet (PDF)

2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3136 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche e.

  2SK3132   2SK3132







Part Number 2SK3135S
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3132 Datasheet2SK3135S Datasheet (PDF)

2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 3 2SK3135(L),2SK3135(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain c.

  2SK3132   2SK3132







Part Number 2SK3135L
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3132 Datasheet2SK3135L Datasheet (PDF)

2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 3 2SK3135(L),2SK3135(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain c.

  2SK3132   2SK3132







Part Number 2SK3135
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3132 Datasheet2SK3135 Datasheet (PDF)

2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 3 2SK3135(L),2SK3135(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain c.

  2SK3132   2SK3132







N-Channel MOSFET

2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3132 Chopper Regulator DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 0.07 Ω (typ.) : |Yfs| = 33 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DCDrain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 50 200 250 525 50 25 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA — — 2-21F1B Weight: 9.75 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.5 35.7 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 µH, RG = 25 Ω, IAR = 50 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-01-25 www.DataSheet.in 2SK3132 Electrical Characteristics (Ta.


2010-12-24 : WP144EDT    WP1413GDT    WP1413HDT    WP1413IDT    WP1413ITL    WP1413SGDL    WP1413SRDT    WP1413YDT    WP144GDT    WP144HDT   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)