FET. 2SK3136 Datasheet


2SK3136 Datasheet PDF


2SK3136


Silicon N Channel MOS FET
2SK3136
Silicon N Channel MOS FET High Speed Power Switching

ADE-208-696B (Z) 3rd. Edition February 1999 Features
• Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

Outline
TO–220AB

D

G

1 2 S 3

1. Gate 2. Drain(Flange) 3. Source

2SK3136
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg
Note 3 Note 3 Note 2 Note 1

Ratings 40 ±20 75 300 75 50 333 100 150 –55 to +150

Unit V V A A A A mJ W °C °C

1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω

2

2SK3136
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 40 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 50 — — — — — — — — — — — — Typ — — — — 4.5 6.5 80 6800 1300 380 130 25 30 60 300 550 400 1.05 90 Max — ±0.1 10 2.5 5.8 10 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 75 A, VGS = 0 I F = 75 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 40 V, VGS = 0 I D = 1 mA, VDS = 10 V Note 1 I D = 40 A, VGS = 10 V Note 1 I D = 40 A, VGS = 4 V N...



2SK3136
2SK3136
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 4.5 mtyp.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
D
ADE-208-696B (Z)
3rd. Edition
February 1999
G
S
1
2
3
1. Gate
2. Drain(Flange)
3. Source

2SK3136
2SK3136
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note 1
D(pulse)
I DR
I Note 3
AP
E Note 3
AR
Pch Note 2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
40
±20
75
300
75
50
333
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2

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