INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK319
DESCRIPTION ·Drain Current –ID...
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
2SK319
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed power Switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source
Voltage (VGS=0)
400 V
Gate-Source
Voltage
±20
V
Drain Current-continuous@ TC=25℃ 5 A
Total Dissipation@TC=25℃
50 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel
Mosfet Transistor
isc Product Specification
2SK319
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold
Voltage
VDS= 10VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID= 3A
IGSS Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS Zero Gate
Voltage Drain Current VDS=320V; VGS= 0
VSD Diode Forward
Voltage
IF= 3A; VGS=0
tr Rise time
ton Turn-on time tf Fall time
VGS=15V;ID=2A;RL=15Ω
toff Turn-off time
MIN TYP MAX UNIT
400 V
1.0 5.0 V
1.10 1.83 ±1
Ω uA
1 mA
0.85 V
35 ns
50 ns
35 ns
120 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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