2SK3230

www.DataSheet4U.com DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230 is suitable for converter of ECM. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 –0.05 FEATURES Compact package High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) Includes diode and high resistance at G - S 1.0 1.6 ± 0.1 0.8 ± 0.1 G D S ORDERING INFORMATION 2SK3230 SC-89 (TUSM) 0.5 ± 0.05 1.6 ± 0.1 PART NUMBER PACKAGE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature Notes 1. VGS = –1.0 V 2. Mounted on ceramic substrate of 3.0 cm x 0.64 mm Remark 2 Note2 Note1 0.2 +0.1 –0 VDSX VGDO ID IG PT Tj Tstg 20 –20 10 10 200 125 –55 to +125 V V mA mA mW °C °C Source Gate Drain EQUIVALENT CIRCUIT Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15942EJ1V0DS00 (1st edition) Date Published January 2002 NS CP(K) Printed in Japan © 2002 2SK3230 ELECTRICAL CHARACTERISTICS (TA = 25°C) CH...