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2SK3255 Datasheet

Part Number 2SK3255
Manufacturers Sanyo
Logo Sanyo
Description TO-220 Type Transistors
Datasheet 2SK3255 Datasheet2SK3255 Datasheet (PDF)

2SK3255 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature *) : Chip Performance Shown Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cu.

  2SK3255   2SK3255






Part Number 2SK3255LS
Manufacturers Sanyo
Logo Sanyo
Description N-Channel MOS Silicon FET
Datasheet 2SK3255 Datasheet2SK3255LS Datasheet (PDF)

2SK3255LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications ¥ Low ON-state resistance. ¥ Low Qg. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature *) : Chip Performance Shown Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current .

  2SK3255   2SK3255







Part Number 2SK3254
Manufacturers Sanyo Electric
Logo Sanyo Electric
Description N-Channel MOS Silicon FET
Datasheet 2SK3255 Datasheet2SK3254 Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) 2SK3254 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature * ):Chip Performance Shown unit VDSS VGSS ID* IDP PD Tch Tstg 500 ±30 10 40 50 150 --55 to ±150 min V(BR)DSS IDSS IGSS VGS(off.

  2SK3255   2SK3255







Part Number 2SK325
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOS Type FET
Datasheet 2SK3255 Datasheet2SK325 Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .

  2SK3255   2SK3255







TO-220 Type Transistors

2SK3255 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature *) : Chip Performance Shown Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time www.DataSheet4U.com Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD ID=1mA VDS=900V VGS=±30V VDS=10V VDS=10V ID=2.5A VDS=20V VDS=20V VDS=20V VDS=200V VGS=20V , , , , , , , , , , VGS=0 VGS=0 VDS=0 ID=1mA ID=2.5A VGS=10V f=1MHz f=1MHz f=1MHz ID=2.5A VDSS VGSS ID* IDP PD Tch Tstg 900 ±30 5 15 35 150 --55 to ±150 min 900 250 ±100 3.5 4.0 2.1 1100 115 28 44 21 43 160 47 1.5 2.8 unit V V A A W °C °C typ max unit V µA nA V S Ω pF pF pF nC ns ns ns ns V (TC=25°C) 2.5 2.4 See Specified Test Circuit IS=2.5A , VGS = 0 (Note) Be careful in handling the2SK3255 because it has no protection diode between gate and source. Switching Time Test Circuit VDD=200V PW=1µS D.C.≤0.5% ID=2.5A RL=80Ω D VOUT 3.5 7.2 Package D.


2005-06-08 : DI240A    STR9005    STR9012    STR9015    STR90120    MC3371    MC3374    MC33742    MC33761    MC33765   


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