2SK3265
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIV)
2SK3265
Chopper Regulators DC−DC Converter...
2SK3265
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIV)
2SK3265
Chopper Regulators DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.72 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 700 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source
voltage Drain−gate
voltage (RGS = 20 kΩ) Gate−source
voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 700 700 ±30 10 30 45 420
http://www.DataSheet4U.net/
Unit V V V A A W mJ A mJ °C °C
Pulse (Note 1)
Drain power dissipation (Tc=25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
— SC-67 2-10R1B
10 4.5 150 −55 to 150
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliabil...