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2SK3265 Transistor Datasheet PDFN-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part Number | 2SK3265 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3265
FEATURES ·Drain Current : ID= 10A@ T C=25℃ ·Drain Source Voltage
: VDSS= 700V(Min) ·Static Drain-Source On-Resi stance
: RDS(on) = 0. 75Ω(Max) @ VGS= 1 0V ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation DESC RIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 700 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain C urrent-Single Pluse 30 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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| Part Number | 2SK3265 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | 2SK3265
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIV)
2SK3265
Chopper Regulators DC−DC Co nverter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leak age current z Enhancement mode : RDS (O N) = 0. 72 Ω (typ. ) : |Yfs| = 7. 0 S (ty p. ) Unit: mm : IDSS = 100 μA (max) (V DS = 700 V) : Vth = 2. 0 to 4. 0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat ings (Ta = 25°C) Characteristics Drain −source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Dr ain current DC (Note 1) Symbol VDSS VDG R VGSS ID IDP PD EAS IAR EAR Tc . |
| Manufacture | Toshiba Semiconductor |
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