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2SK3265 Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number 2SK3265
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3265 FEATURES ·Drain Current : ID= 10A@ T C=25℃ ·Drain Source Voltage : VDSS= 700V(Min) ·Static Drain-Source On-Resi stance : RDS(on) = 0.
75Ω(Max) @ VGS= 1 0V ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation DESC RIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 700 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain C urrent-Single Pluse 30 A .
Manufacture Inchange Semiconductor
Datasheet
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2SK3265

 

 

 


 

 

 

Part Number 2SK3265
Description N-Channel MOSFET
Feature 2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIV) 2SK3265 Chopper Regulators DC−DC Co nverter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leak age current z Enhancement mode : RDS (O N) = 0.
72 Ω (typ.
) : |Yfs| = 7.
0 S (ty p.
) Unit: mm : IDSS = 100 μA (max) (V DS = 700 V) : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat ings (Ta = 25°C) Characteristics Drain −source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Dr ain current DC (Note 1) Symbol VDSS VDG R VGSS ID IDP PD EAS IAR EAR Tc .
Manufacture Toshiba Semiconductor
Datasheet
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2SK3265

 

 

 

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