This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOS FETs
2SK3268
Silicon N-channel power MOS FET
...
This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOS FETs
2SK3268
Silicon N-channel power MOS FET
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■ Features
Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown Low-
voltage drive High electrostatic energy capability
■ Applications
Non-contact relay Solenoid drive Motor drive Control equipment Switching mode regulator
■ Package Code
U-DL Pin Name
1: Gate 2: Drain 3: Source
■ Marking Symbol: K3268
■ Internal Connection
D
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Drain-source surrender
voltage Gate-source surrender
voltage Drain current Peak drain current Avalanche energy capability *
VDSS VGSS
ID IDP EAS
100 ±20 ±15 ±60 22.5
Power dissipation
Channel temperature Storage temperature
PD 20
Ta = 25°C
1
Tch 150
Tstg −55 to +150
Unit V V A A mJ W
°C °C
G S
Note) *: L = 0.2 mH, IL = 15 A, 1 pulse
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Drain-source surrender
voltage Drain-source cutoff current Gate-source cutoff current Gate threshold
voltage Forward transfer admittance Drain-source ON resistance Diode forward
voltage
Short-circuit forward transfer capacitance (Common source)
...
