DatasheetsPDF.com

2SK3310 Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number 2SK3310
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3310 FEATURES ·Drain Current : ID= 10A@ T C=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resi stance : RDS(on) = 0.
65Ω(Max) @ VGS= 1 0V ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation DESC RIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 450 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain C urrent-Single Pluse 40 A .
Manufacture Inchange Semiconductor
Datasheet
Download 2SK3310 Datasheet

2SK3310

 

 

 


 

 

 

Part Number 2SK3310
Description N-Channel MOSFET
Feature 2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2 SK3310 Switching Regulator Applications Unit: mm



• Low drain-sou rce ON resistance: RDS (ON) = 0.
48 Ω (typ.
) High forward transfer admittance : |Yfs| = 4.
3 S (typ.
) Low leakage curr ent: IDSS = 100 µA (max) (VDS = 450 V) Enhancement model: Vth = 3.
0~5.
0 V (VD S = 10 V, ID = 1 mA) Maximum Ratings ( Ta = 25°C) Characteristics Drain-sourc e voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Ts tg Rating 450 450 ±30 10 40 4 .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3310 Datasheet

2SK3310

 

 

 

@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)