2SK3313

2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3313 Chopper Regulator, DC−DC Converter Applications Motor Drive Applications l Fast reverse recovery time l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : trr = 90 ns (typ.) : RDS (ON) = 0.5 Ω (typ.) : |Yfs| = 8.5 S (typ.) Unit: mm l Built−in high−speed free−wheeling diode : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 12 48 40 324 12 4.0 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA — SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 3.125 62.5 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.83 mH, RG = 25 Ω, IAR = 12 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive dev...