2SK3322

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that www.DataSheet4U.com ORDERING INFORMATION PART NUMBER 2SK3322 2SK3322-S 2SK3322-ZJ PACKAGE TO-220AB (MP-25) TO-262 TO-263(MP-25ZJ) TO-263(MP-25ZK) features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ★ 2SK3322-ZK FEATURES ★ Low gate charge : QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A) Gate voltage rating : ±30 V Low on-state resistance : RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8 A) Avalanche capability ratings Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±5.5 ±20 1.5 65 150 −55 to +150 4.0 10.7 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information contained in this document is being issued in advance of the production cycle for the product. The parameters for the product may change before final production or NEC Electronics Corporation, at it...