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2SK3435-Z Datasheet

Part Number 2SK3435-Z
Manufacturers Renesas
Logo Renesas
Description N-CHANNEL POWER MOSFET
Datasheet 2SK3435-Z Datasheet2SK3435-Z Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Low Ciss: Ciss = 3200 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3435 TO-220AB 2SK3435-S TO-262 2SK3435-ZJ 2SK3435-Z .

  2SK3435-Z   2SK3435-Z






Part Number 2SK3435-Z
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3435-Z Datasheet2SK3435-Z Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3435-Z FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Volt.

  2SK3435-Z   2SK3435-Z







N-CHANNEL POWER MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Low Ciss: Ciss = 3200 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3435 TO-220AB 2SK3435-S TO-262 2SK3435-ZJ 2SK3435-Z TO-263 TO-220SMD Note Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ±80 A ID(pulse) ±160 A Total Power Dissipation (TC = 25°C) PT 84 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 Single Avalanche Energy Note2 IAS 31 A EAS 96 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V (TO-262) (TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document N.


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