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2SK3473 Datasheet

Part Number 2SK3473
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3473 Datasheet2SK3473 Datasheet (PDF)

www.DataSheet4U.com 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3473 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Dra.

  2SK3473   2SK3473






Part Number 2SK3479-ZJ
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3473 Datasheet2SK3479-ZJ Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3479-ZJ FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source V.

  2SK3473   2SK3473







Part Number 2SK3479-Z
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3473 Datasheet2SK3479-Z Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3479-Z FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Vo.

  2SK3473   2SK3473







Part Number 2SK3479-S
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3473 Datasheet2SK3479-S Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3479-S FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Vo.

  2SK3473   2SK3473







Part Number 2SK3479
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3473 Datasheet2SK3479 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3479 FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Volt.

  2SK3473   2SK3473







Part Number 2SK3479
Manufacturers Kexin
Logo Kexin
Description MOS Field Effect Transistor
Datasheet 2SK3473 Datasheet2SK3479 Datasheet (PDF)

SMD Type MOS Field Effect Transistor 2SK3479 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on)1 = 11 m RDS(on)2 = 13 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 11000 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter D.

  2SK3473   2SK3473







N-Channel MOSFET

www.DataSheet4U.com 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3473 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 9 27 150 413 9 15 150 -55~150 A W mJ A mJ °C °C Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-65 2-16C1B Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit °C/W °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 9.35 mH, IAR = 9 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-07-16 2SK3473 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakag.


2007-02-15 : 2SK300    2SK3453    2SK3473    33897    A6832    A6833    AMC431    BLM41A151S    CA311    D10F   


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