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2SK3479-S Datasheet

Part Number 2SK3479-S
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3479-S Datasheet2SK3479-S Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3479-S FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Vo.

  2SK3479-S   2SK3479-S






Part Number 2SK3479-ZJ
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3479-S Datasheet2SK3479-ZJ Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3479-ZJ FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source V.

  2SK3479-S   2SK3479-S







Part Number 2SK3479-Z
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3479-S Datasheet2SK3479-Z Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3479-Z FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Vo.

  2SK3479-S   2SK3479-S







N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK3479-S FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 83 A IDM Drain Current-Single Pluse 332 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on)1 Drain-Source On-Resistance CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID= 1mA VGS= 10V; ID= 42A RDS(on)2 Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VGS= 4.5V; ID= 42A VGS= ±20V;VDS= 0 VDS=100V; VGS= 0 IS= 83A; VGS= 0 2SK3479-S MIN MAX UNIT 100 -- V 1.5 2.5 V -- 11 mΩ -- 13 mΩ -- ±10 uA -- 10 uA.


2022-05-29 : 2SK3435-S    2SK3435    2SK3479-ZJ    2SK3479-Z    2SK3468    2SK3479    2SK3479-S    2SK3450    2SK3437K    2SK3437B   


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