2SK3483

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3483 SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com DESCRIPTION The 2SK3483 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3483 2SK3483-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES Low on-state resistance RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A) Low Ciss: Ciss = 2300 pF TYP. Built-in gate protection diode TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0V) Gate to Source Voltage (VDS = 0V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 100 ±20 ±28 ±60 40 1.0 150 –55 to +150 25 62.5 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15068EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The m...