DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3484
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3484 is N-channel M...
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3484
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A)
Low Ciss: Ciss = 900 pF TYP. Built-in gate protection diode TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3484
TO-251 (MP-3)
2SK3484-Z
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source
Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±16
A
±22
A
Total Power Dissipation (TC = 25°C)
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg
–55 to +150 °C
IAS
10
A
EAS
10
mJ
(TO-252)
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
4.17 °C/W 125 °C/W
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