2SK3492D

isc N-Channel MOSFET Transistor 2SK3492D FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 15 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 8.33 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on)1 Drain-Source On-Resistance CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID= 1mA VGS= 10V; ID= 4A RDS(on)2 Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VGS= 4V; ID= 4A VGS= ±16V;VDS= 0 VDS=60V; VGS= 0 IS= 8A; VGS= 0 2SK3492D MIN MAX UNIT 60 -- V 1.2 2.6 V -- 0.15 Ω -- 0.22 Ω -- ±10 uA -- 1 uA -- 1.2 ...