POWER MOSFET. 2SK3513-01S Datasheet

2SK3513-01S Datasheet PDF


Part Number

2SK3513-01S

Description

N-CHANNEL SILICON POWER MOSFET

Manufacture

Fuji Electric

Total Page 4 Pages
Datasheet
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2SK3513-01S
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2SK3513-01L,S,SJ
FUJI POWER MOSFET
200303
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
600 V
Continuous drain current
ID
±12 A
Pulsed drain current
ID(puls]
±48 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
12 A
Maximum Avalanche Energy
EAS *1
183 mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
1.67
195
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch =<150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc <= BVDSS, Tch<= 150°C *4 VDS<= 600V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V Tch=25°C
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=5A VGS=10V
Tch=125°C
ID=5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=5A
VGS=10V
RGS=10
VCC=250V
ID=10A
VGS=10V
L=2.33mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
600 V
3.0 5.0 V
25 µA
250
10 100
nA
0.58 0.75
48
S
1200 1800
pF
140 210
69
17 26 ns
15 23
35 53
7 11
30 45 nC
11 16.5
10 15
12 A
1.00 1.50 V
0.75 µs
5.0 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.641 °C/W
75.0 °C/W
1

2SK3513-01S
2SK3513-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
250
200
150
100
50
0
0 25 50 75 100 125 150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
22
20V
10V
20 8V
7.5V
18
16
14
12
7.0V
10
8
6 VGS=6.5V
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
ID [A]
10
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=60V
AS
500
450
I =5A
400 AS
350
300
250
I =8A
AS
200
150
I =12A
AS
100
50
0
0 25 50
75 100 125 150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
2.0
VGS=6.5V
7.0V
1.5
7.5V8V 10V
1.0 20V
0.5
0.0
0
5 10 15 20
ID [A]
2




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