co Super FAP-G .Series U 4 t Features e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low ...
co Super FAP-G .Series U 4 t Features e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low driving a Avalanche-proof .D w wApplications regulators w Switching UPS (Uninterruptible Power Supply)
DC-DC converters
(Tc=25°C unless otherwise specified)
Item Drain-source
voltage Continuous drain current Pulsed drain current Gate-source
voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C
2SK3518-01MR m
FUJI POWER
MOSFET200303
N-CHANNEL SILICON POWER
MOSFET
Outline Drawings [mm]
TO-220F
Maximum ratings and characteristicAbsolute maximum ratings
Ratings 500 ±6 ±24 ±30 6 115 20 5 2.16 32 Operating and storage Tch +150 -55 to +150 temperature range Tstg Isolation
Voltage VISO *5 2 *1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < Item Drain-source breakdown
voltaget Gate threshold
voltage Zero gate
voltage drain current Unit V A A V A mJ kV/µs kV/µs W
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol V(BR)DSS VGS(th) IDSS Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=500V VGS=0V Tch=125°C VDS=400V VGS=0V VGS=±30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V RGS=10 Ω V CC=250V ID=6A VGS=10V L=5.9mH Tch=25°C IF=6A VGS=0V Tch=25°C IF=6A VGS=0V...
