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2SK3529-01 MOSFET Datasheet PDF

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

 

 

 

Part Number 2SK3529-01
Description N-CHANNEL SILICON POWER MOSFET
Feature 2SK3529-01 FUJI POWER MOSFET N-CHANNEL S ILICON POWER MOSFET Outline Drawings [m m] TO-220AB 200304 Super FAP-G Series Features High speed switching Low on-r esistance No secondary breadown Low dri ving power Avalanche-proof Application s Switching regulators UPS (Uninterrupt ible Power Supply) DC-DC converters Ma ximum ratings and characteristicAbsolut e maximum ratings (Tc=25°C unless othe rwise specified) Item Drain-source volt age Continuous drain current Pulsed dra in current Gate-source voltage Repetiti ve or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery .
Manufacture Fuji
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Part Number 2SK3529-01
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3529 -01 FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS = 800V(Min) ·Static Drain-Source On-Re sistance : RDS(on) = 1.
9Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum L ot-to-Lot variations for robust device performance and reliable operation DES CRIPTION ·motor drive, DC-DC converter , power switch and solenoid drive.
ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-S ource Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain C urrent-Single Pluse 28 A .
Manufacture Inchange Semiconductor
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