2SK3547

Silicon Junction FETs (Small Signal) 2SK3547 Silicon n-channel MOSFET Unit: mm For switching ■ Features High-speed switching Wide frequency band Gate-protection diode built-in 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 100 125 −55 to +125 Unit V V mA mA mW °C °C 0.15 min. 0.23+0.05 –0.02 1 2 0 to 0.01 0.52±0.03 5˚ 1: Gate 2: Source 3: Drain SSSMini3-F1 Package Marking Symbol: 5F ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss ton toff Conditions ID = 10 µA, VGS = 0 VDS = 50 V, VGS = 0 VGS = ±7 V, VDS = 0 ID = 1.0 µA, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on time * Min 50 Typ Max Unit V µA µA V Ω 1.0 ±5.0 0.9 1.2 8 6 20 60 12 7 3 200 200 1.5 15 12 ID = 10 mA, VDS = 3 V, f = 1 kHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, VGS...