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2SK3562 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number 2SK3562
Description N-Channel MOSFET
Feature 2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2 SK3562 Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 0.
9 Ω (typ.
)
• High forwa rd transfer admittance: |Yfs| = 5.
0 S ( typ.
)
• Low leakage current: IDSS = 1 00 μA (max) (VDS = 600 V)
• Enhancem ent mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maxim um Ratings (Ta = 25°C) Characteristic s Symbol Rating Unit Drain-source v oltage Drain-gate voltage (RGS = 20 k ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc .
Manufacture Toshiba Semiconductor
Datasheet
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2SK3562

 

 

 


 

 

 

Part Number 2SK3562
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3562 FEATURES ·Drain Current : ID= 6A@ TC =25℃ ·Drain Source Voltage : VDSS= 6 00V(Min) ·Static Drain-Source On-Resis tance : RDS(on) = 1.
25Ω(Max) @ VGS= 10 V ·100% avalanche tested ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation DESCR IPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou rce Voltage 600 V VGS Gate-Source V oltage-Continuous ±30 V ID Drain C urrent-Continuous 6 A IDM Drain Cur rent-Single Pluse 24 A .
Manufacture Inchange Semiconductor
Datasheet
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2SK3562

 

 

 

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