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2SK3563 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number 2SK3563
Description N-Channel MOSFET
Feature DataSheet.
in TENTATIVE TOSHIBA Field Ef fect Transistor Silicon N Channel MOS T ype (π-MOSⅥ) 2SK3563 2SK3563 unit mm Switching Regulator Applicati ons 10±0.
3 Maximum Ratings (Ta = 25° C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gat e-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.
5 150 -55~150 A W mJ A m J °C °C Unit 0.
69±0.
15 2.
8Max V V V 2.
54±0.
25 0.
64±0.
15 2.
54±0.
25 2.
6 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche .
Manufacture Toshiba Semiconductor
Datasheet
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Part Number 2SK3563
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3563 FEATURES ·Drain Current : ID= 5A@ TC =25℃ ·Drain Source Voltage : VDSS= 5 00V(Min) ·Static Drain-Source On-Resis tance : RDS(on) = 1.
5Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot- to-Lot variations for robust device per formance and reliable operation DESCRI PTION ·motor drive, DC-DC converter, p ower switch and solenoid drive.
ABSOLU TE MAXIMUM RATINGS(Ta=25℃) SYMBOL P ARAMETER VALUE UNIT VDSS Drain-Sour ce Voltage 500 V VGS Gate-Source Vo ltage-Continuous ±30 V ID Drain Cu rrent-Continuous 5 A IDM Drain Curr ent-Single Pluse 20 A P .
Manufacture Inchange Semiconductor
Datasheet
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