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2SK3567 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number 2SK3567
Description N-Channel MOSFET
Feature 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 Switching Regulator Application s



• Low drain-source ON r esistance: RDS (ON) = 1.
7Ω (typ.
) High forward transfer admittance: |Yfs| = 2 .
5S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA ) Unit: mm www.
DataSheet4U.
com Absolu te Maximum Ratings (Ta = 25°C) Charact eristics Drain-source voltage Drain-gat e voltage (RGS = 20 kΩ) Gate-source vo ltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tc h Tstg Rating 600 600 ±30 3 .
Manufacture Toshiba Semiconductor
Datasheet
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2SK3567

 

 

 


 

 

 

Part Number 2SK3567
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3567 FEATURES ·Drain Current : ID= 3.
5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Res istance : RDS(on) = 2.
2Ω(Max) @ VGS= 1 0V ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation DESC RIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3.
5 A IDM Drain Current-Single Pluse 14 .
Manufacture Inchange Semiconductor
Datasheet
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