2SK3568
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3568
Switching Regulator Applications
...
2SK3568
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3568
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID
IDP
PD
EAS
IAR EAR Tch Tstg
500
V
500
V
±30
V
12
A 48
40
W
364
mJ
12
A
4
mJ
150
°C
-55 to 150
°C
1: Gate 2: Drain 3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliab...