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2SK3569 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number 2SK3569
Description N-Channel MOSFET
Feature 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2 SK3569 Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 0.
54 Ω (typ.
)
• High forw ard transfer admittance: |Yfs| = 8.
5 S (typ.
)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhance ment mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maxi mum Ratings (Ta = 25°C) Characteristi cs Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 k Ω) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc .
Manufacture Toshiba Semiconductor
Datasheet
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2SK3569

 

 

 


 

 

 

Part Number 2SK3569
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor DESCRIP TION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Mi n) ·Fast Switching Speed ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation APPLI CATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MA XIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltag e (VGS=0) 600 V VGS Gate-Source Vol tage ±30 V ID Drain Current-contin uous@ TC=25℃ 10 A ID(puls) Pulsed Drain Current 40 A Ptot Total Diss ipation@TC=25℃ 45 W Tj Max.
Opera ting Junction Temperature 150 .
Manufacture INCHANGE
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2SK3569

 

 

 

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