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2SK3569 Datasheet

Part Number 2SK3569
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3569 Datasheet2SK3569 Datasheet (PDF)

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Ga.

  2SK3569   2SK3569






Part Number 2SK3569
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet 2SK3569 Datasheet2SK3569 Datasheet (PDF)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A ID(puls) Pulsed Drain.

  2SK3569   2SK3569







N-Channel MOSFET

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 V 600 V ±30 V 10 A 40 45 W 363 mJ 10 A 4.5 mJ 150 °C -55 to 150 °C 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individu.


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