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2SK3587-01MR MOSFET Datasheet PDF

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

 

 

 

Part Number 2SK3587-01MR
Description N-CHANNEL SILICON POWER MOSFET
Feature 2SK3587-01MR FUJI POWER MOSFET 200304 S uper FAP-G Series Features High speed s witching Low on-resistance No secondary breadown Low driving power Avalanche-p roof N-CHANNEL SILICON POWER MOSFET Ou tline Drawings (mm) TO-220F Applicatio ns Switching regulators UPS (Uninterrup tible Power Supply) DC-DC converters M aximum ratings and characteristicAbsolu te maximum ratings (Tc=25°C unless oth erwise specified) Ratings Unit V 100 V 70 A Continuous drain current ±73 Equi valent A Pulsed drain current ±292 V G ate-source voltage ±30 A Non-repetitiv e Avalanche current 73 mJ Maximum Avala nche Energy 319.
2 .
Manufacture Fuji Electric
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Part Number 2SK3587-01MR
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3587 -01MR FEATURES ·Drain Current : ID= 7 3A@ TC=25℃ ·Drain Source Voltage : V DSS= 100V(Min) ·Static Drain-Source On -Resistance : RDS(on) = 25mΩ(Max) @ VG S= 10V ·100% avalanche tested ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operation DESCRIPTION ·motor drive, DC-DC conver ter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM BOL PARAMETER VALUE UNIT VDSS Drai n-Source Voltage 100 V VGS Gate-Sou rce Voltage-Continuous ±30 V ID Dr ain Current-Continuous 73 A IDM Dra in Current-Single Pluse 1 .
Manufacture Inchange Semiconductor
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