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2SK3592S Datasheet

Part Number 2SK3592S
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3592S Datasheet2SK3592S Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3592S FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Vol.

  2SK3592S   2SK3592S






Part Number 2SK3592L
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3592S Datasheet2SK3592L Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3592L FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Vol.

  2SK3592S   2SK3592S







Part Number 2SK3592-01SJ
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3592S Datasheet2SK3592-01SJ Datasheet (PDF)

www.DataSheet4U.com 2SK3592-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 150 V 120 A Continuous drain current ±57 A Pulsed.

  2SK3592S   2SK3592S







Part Number 2SK3592-01S
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3592S Datasheet2SK3592-01S Datasheet (PDF)

www.DataSheet4U.com 2SK3592-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 150 V 120 A Continuous drain current ±57 A Pulsed.

  2SK3592S   2SK3592S







Part Number 2SK3592-01L
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3592S Datasheet2SK3592-01L Datasheet (PDF)

www.DataSheet4U.com 2SK3592-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 150 V 120 A Continuous drain current ±57 A Pulsed.

  2SK3592S   2SK3592S







N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK3592S FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 57 A IDM Drain Current-Single Pluse 200 A PD Total Dissipation @TC=25℃ 270 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.46 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID= 0.25mA VGS= 10V; ID= 20A VGS= ±30V;VDS= 0 VDS= 150V; VGS= 0 IS= 40A; VGS= 0 2SK3592S MIN MAX UNIT 150 -- V 3 5 V -- 41 mΩ -- ±0.1 uA -- 25 uA -- 1.65 V NOTICE: ISC reserves the rights to make changes of.


2022-07-09 : 2SK3581L    2SK3579-01MR    2SK3600L    2SK3611-01MR    2SK3610-01    2SK3608S    2SK3608L    2SK3607-01MR    2SK3606-01    2SK3604S   


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