2SK3595-01MR

2SK3595-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 200 170 ±45 ±180 ±30 45 258.9 20 5 2.16 95 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *6 *1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < 150°C = < < < < *3 IF = -ID, -di/dt=50A/µs, Vcc = BVDSS, Tch = 150°C *4 VDS = 200V *5 VGS=-30V *6 t=60sec f=60Hz www.DataSheet4U.com Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Cha...