2SK3596-01S

www.DataSheet4U.com 2SK3596-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Ratings 200 170 ±30 ±120 ±30 30 387 20 5 1.67 135 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) Tch °C Tstg °C < < *3 I F -I D , -di/dt=50A/µs, Vcc BV DSS , Tch < *1 L=689µH, Vcc=48V *2 Tch< 150°C = = = 150°C = *4 VDS < = 200V *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability ...