DatasheetsPDF.com

2SK3598-01 Datasheet

Part Number 2SK3598-01
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3598-01 Datasheet2SK3598-01 Datasheet (PDF)

  2SK3598-01   2SK3598-01
isc N-Channel MOSFET Transistor 2SK3598-01 FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 29 A IDM Drain Current-Single Pluse 116 A PD Total Dissipation @TC=25℃ 105 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.19 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise s.






Part Number 2SK3598-01
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3598-01 Datasheet2SK3598-01 Datasheet (PDF)

  2SK3598-01   2SK3598-01
2SK3598-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 100 V VDSX *5 70 V Continuous drain current ID ±29 A Pulsed drain current ID(puls] ±116 A Gate-source voltage VGS ±30 V Non-repetitive Avalanche current IAS *2 29 A Maximum Avalanche Energy EAS *1 155.8 mJ Maxim.






N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK3598-01 FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 29 A IDM Drain Current-Single Pluse 116 A PD Total Dissipation @TC=25℃ 105 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.19 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID= 0.25mA VGS= 10V; ID= 10A VGS= ±30V;VDS= 0 VDS= 100V; VGS= 0 IS= 20A; VGS= 0 2SK3598-01 MIN MAX UNIT 100 -- V 3 5 V -- 62 mΩ -- ±0.1 uA -- 25 uA -- 1.65 V NOTICE: ISC reserves the rights to make change.



2022-07-09 : 2SK3581L    2SK3579-01MR    2SK3600L    2SK3611-01MR    2SK3610-01    2SK3608S    2SK3608L    2SK3607-01MR    2SK3606-01    2SK3604S   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)