2SK3598-01 Datasheet
Part Number |
2SK3598-01 |
Manufacturers |
Inchange Semiconductor |
Logo |
|
Description |
N-Channel MOSFET Transistor |
Datasheet |
2SK3598-01 Datasheet (PDF) |
isc N-Channel MOSFET Transistor
2SK3598-01
FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 62mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
29
A
IDM
Drain Current-Single Pluse
116
A
PD
Total Dissipation @TC=25℃
105
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.19
UNIT ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise s.
Part Number |
2SK3598-01 |
Manufacturers |
Fuji Electric |
Logo |
|
Description |
N-CHANNEL SILICON POWER MOSFET |
Datasheet |
2SK3598-01 Datasheet (PDF) |
2SK3598-01
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220AB
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100
V
VDSX *5
70
V
Continuous drain current
ID
±29
A
Pulsed drain current
ID(puls]
±116
A
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
29
A
Maximum Avalanche Energy
EAS *1
155.8
mJ
Maxim.
N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor
2SK3598-01
FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 62mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
29
A
IDM
Drain Current-Single Pluse
116
A
PD
Total Dissipation @TC=25℃
105
W
TJ
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.19
UNIT ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID= 0.25mA VGS= 10V; ID= 10A VGS= ±30V;VDS= 0 VDS= 100V; VGS= 0 IS= 20A; VGS= 0
2SK3598-01
MIN MAX UNIT
100
--
V
3
5
V
--
62
mΩ
--
±0.1
uA
--
25
uA
--
1.65
V
NOTICE: ISC reserves the rights to make change.
2022-07-09 : 2SK3581L 2SK3579-01MR 2SK3600L 2SK3611-01MR 2SK3610-01 2SK3608S 2SK3608L 2SK3607-01MR 2SK3606-01 2SK3604S