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2SK3603-01MR MOSFET Datasheet PDF

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

 

 

 

Part Number 2SK3603-01MR
Description N-CHANNEL SILICON POWER MOSFET
Feature 2SK3603-01MR FUJI POWER MOSFET 200304 S uper FAP-G Series Features High speed s witching Low on-resistance No secondary breadown Low driving power Avalanche-p roof N-CHANNEL SILICON POWER MOSFET Ou tline Drawings (mm) TO-220F Applicatio ns Switching regulators UPS (Uninterrup tible Power Supply) DC-DC converters M aximum ratings and characteristicAbsolu te maximum ratings (Tc=25°C unless oth erwise specified) Item Drain-source vol tage Continuous drain current Pulsed dr ain current Gate-source voltage Non-rep etitive Avalanche current Maximum Avala nche Energy Maximum Drain-Source dV/dt Peak Diode Reco .
Manufacture Fuji Electric
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Part Number 2SK3603-01MR
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3603 -01MR FEATURES ·Drain Current : ID= 2 3A@ TC=25℃ ·Drain Source Voltage : V DSS= 150V(Min) ·Static Drain-Source On -Resistance : RDS(on) = 105mΩ(Max) @ V GS= 10V ·100% avalanche tested ·Minim um Lot-to-Lot variations for robust dev ice performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve rter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY MBOL PARAMETER VALUE UNIT VDSS Dra in-Source Voltage 150 V VGS Gate-So urce Voltage-Continuous ±30 V ID D rain Current-Continuous 23 A IDM Dr ain Current-Single Pluse .
Manufacture Inchange Semiconductor
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