DatasheetsPDF.com

2SK3610-01 Datasheet

Part Number 2SK3610-01
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3610-01 Datasheet2SK3610-01 Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3610-01 FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source .

  2SK3610-01   2SK3610-01






Part Number 2SK3610-01
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3610-01 Datasheet2SK3610-01 Datasheet (PDF)

2SK3610-01 FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage N.

  2SK3610-01   2SK3610-01







N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK3610-01 FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Pluse 56 A PD Total Dissipation @TC=25℃ 105 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.19 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID= 0.25mA VGS= 10V; ID= 5A VGS= ±30V;VDS= 0 VDS= 250V; VGS= 0 IS= 10A; VGS= 0 2SK3610-01 MIN MAX UNIT 250 -- V 3 5 V -- 260 mΩ -- ±0.1 uA -- 25 uA -- 1.65 V NOTICE: ISC reserves the rights to make change.


2022-07-09 : 2SK3581L    2SK3579-01MR    2SK3600L    2SK3611-01MR    2SK3610-01    2SK3608S    2SK3608L    2SK3607-01MR    2SK3606-01    2SK3604S   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)