SMD Type
Silicon N-channel Power MOSFET 2SK3628
TO-263
+ 0 .1 1 .2 7 -0 .1
Transistors IC
Unit: mm
+0.1 1.27-0.1 +0.2 ...
SMD Type
Silicon N-channel Power
MOSFET 2SK3628
TO-263
+ 0 .1 1 .2 7 -0 .1
Transistors IC
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
High-speed switching Low ON resistance Ron
+ 0 .2 8 .7 -0 .2
No secondary breakdown Avalanche energy capability guaranteed
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+ 0 .2 5 .2 8 -0 .2
2.54
+0.2 -0.2 +0.1 5.08-0.1
+ 0 .2 2 .5 4 -0 .2
+ 0 .2 1 5 .2 5 -0 .2
2.54
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain-source surrender
voltage Gate-source surrender
voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 230 30 20 80 570 3 100 150 -55 to +150 Unit V V A A mJ W
5 .6 0
1 Gate 2 Drain 3 Source
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Free Datasheet http://www.datasheet4u.com/
SMD Type
2SK3628
Electrical Characteristics Ta = 25
Parameter Gate-drain surrender
voltage Diode forward
voltage Gate threshold
voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance Short-circuit output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VDSF Vth IDSS IGSS Testconditons ID = 1 mA, VGS = 0 IDR = 20 A, VGS = 0 VDS = 25 V, ID = 1 mA VDS = 184 V, VGS = 0 VGS = 30 V, VDS = 0
Transistors IC
Min 230
Typ
Max
Unit V
-1.5 1.7 3.7 100 1 65 7 14 230...