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2SK3649-01MR MOSFET Datasheet PDF

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

 

 

Part Number 2SK3649-01MR
Description N-CHANNEL SILICON POWER MOSFET
Feature www.
DataSheet4U.
com 2SK3649-01MR FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/d.
Manufacture Fuji Electric
Datasheet
Download 2SK3649-01MR Datasheet
Part Number 2SK3649-01MR
Description N-CHANNEL SILICON POWER MOSFET
Feature www.
DataSheet4U.
com 2SK3649-01MR FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/d.
Manufacture Fuji Electric
Datasheet
Download 2SK3649-01MR Datasheet

2SK3649-01MR
2SK3649-01MR   2SK3649-01MR

 

 

 

 


 

Part Number 2SK3649-01MR
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3649-01MR FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 33 A IDM Drain Current-Single Pluse 1.
Manufacture Inchange Semiconductor
Datasheet
Download 2SK3649-01MR Datasheet
Part Number 2SK3649-01MR
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3649-01MR FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 33 A IDM Drain Current-Single Pluse 1.
Manufacture Inchange Semiconductor
Datasheet
Download 2SK3649-01MR Datasheet

2SK3649-01MR
2SK3649-01MR   2SK3649-01MR

 

 

 

 

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