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2SK3659 Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number 2SK3659
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3659 FEATURES ·Drain Current : ID= 25A@ T C=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resi stance : RDS(on) = 5.
7mΩ(Max) @ VGS= 1 0V ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation DESC RIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 20 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 65 A IDM Drain Cu rrent-Single Pluse 260 A .
Manufacture Inchange Semiconductor
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Part Number 2SK3659
Description SWITCHING N-CHANNEL POWER MOSFET
Feature www.
DataSheet4U.
com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristic s, designed for low voltage high curren t applications such as DC/DC converter with synchronous rectifier.
ORDERING I NFORMATION PART NUMBER 2SK3659 PACKAGE Isolated TO-220 FEATURES
•4.
5V drive available.

•Low on-state resistance, RDS(on)1 = 5.
7 mΩ MAX.
(VGS = 10 V, ID = 40 A)
•Low gate charge, QG = 32 nC TYP.
(VDD = 16 V, VGS = 10 V, ID = 6 5 A)
•Built-in gate pr .
Manufacture NEC
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