DatasheetsPDF.com

2SK3662 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

　

　

Part Number	*2SK3662*
Description	N-Channel MOSFET
Feature	2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • • • Low drain-source ON resistance: RDS (ON) = 9. 4 mΩ (typ. ) High forward transfer admittance: \|Yfs\| = 55 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm • Enhancement mode : Vth = 1. 3 to 2. 5 V (VDS = 10 V, ID = 1 mA) www. DataSheet4U. com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD .
Manufacture	Toshiba Semiconductor
Datasheet	Download 2SK3662 Datasheet

Part Number	*2SK3662*
Description	N-Channel MOSFET
Feature	2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • • • Low drain-source ON resistance: RDS (ON) = 9. 4 mΩ (typ. ) High forward transfer admittance: \|Yfs\| = 55 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm • Enhancement mode : Vth = 1. 3 to 2. 5 V (VDS = 10 V, ID = 1 mA) www. DataSheet4U. com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD .
Manufacture	Toshiba Semiconductor
Datasheet	Download 2SK3662 Datasheet

2SK3662

2SK3662

2SK3662

　

　

　

　

　

Part Number	*2SK3662*
Description	N-Channel MOSFET
Feature	2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • • • Low drain-source ON resistance: RDS (ON) = 9. 4 mΩ (typ. ) High forward transfer admittance: \|Yfs\| = 55 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm • Enhancement mode : Vth = 1. 3 to 2. 5 V (VDS = 10 V, ID = 1 mA) www. DataSheet4U. com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD .
Manufacture	Toshiba Semiconductor
Datasheet	Download 2SK3662 Datasheet

Part Number	*2SK3662*
Description	N-Channel MOSFET
Feature	2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • • • Low drain-source ON resistance: RDS (ON) = 9. 4 mΩ (typ. ) High forward transfer admittance: \|Yfs\| = 55 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm • Enhancement mode : Vth = 1. 3 to 2. 5 V (VDS = 10 V, ID = 1 mA) www. DataSheet4U. com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD .
Manufacture	Toshiba Semiconductor
Datasheet	Download 2SK3662 Datasheet

2SK3662

2SK3662

2SK3662

　

　

　

　

　

@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)