2SK3662

2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 55 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 60 60 ±20 35 105 35 204 35 3.5 150 −55 to 150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. relia...