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2SK3674-01SJ Datasheet

Part Number 2SK3674-01SJ
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3674-01SJ Datasheet2SK3674-01SJ Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3674-01SJ FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Sourc.

  2SK3674-01SJ   2SK3674-01SJ






Part Number 2SK3674-01S
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK3674-01SJ Datasheet2SK3674-01S Datasheet (PDF)

isc N-Channel MOSFET Transistor 2SK3674-01S FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source.

  2SK3674-01SJ   2SK3674-01SJ







Part Number 2SK3674-01S
Manufacturers Fuji Electric
Logo Fuji Electric
Description Power MOSFET
Datasheet 2SK3674-01SJ Datasheet2SK3674-01S Datasheet (PDF)

2SK3674-01L,S,SJ (900V/2.0Ω/7A) 1) Package T-PACK L •E•E•ESee Page 2/4 S •E•E•ESee Page 3/4 SJ •E•E•ESee Page 4/4 PRELIMINARY 2) Absolute Maximum Ratings (Tc=25• Ž • @ Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage www.DataSheet4U.com Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode recovery dV/dt Maximum Power Dissipation This material and the information herein i.

  2SK3674-01SJ   2SK3674-01SJ







N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 2SK3674-01SJ FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.0 A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 225 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.56 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= 10V; ID= 0.25mA VGS= 10V; ID= 3.5A VGS= ±30V;VDS= 0 VDS= 900V; VGS= 0 IS= 7.0A; VGS= 0 2SK3674-01SJ MIN MAX UNIT 900 -- V 3.0 5.0 V -- 2.0 Ω -- ±0.1 uA -- 50 uA -- 1.5 V NOTICE: ISC reserves the rights to m.


2022-07-30 : 2SK3675-01    2SK3674-01SJ    2SK3674-01S    2SK3674-01L    2SK3673-01MR    2SK3659    2SK3651-01R    2SK3650-01SJ    2SK3650-01S    2SK3650-01L   


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