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2SK3676-01S Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number 2SK3676-01S
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3676 -01S FEATURES ·Drain Current : ID= 6.
0A@ TC=25℃ ·Drain Source Voltage : V DSS= 900V(Min) ·Static Drain-Source On -Resistance : RDS(on) = 2.
5Ω(Max) @ VG S= 10V ·100% avalanche tested ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operation DESCRIPTION ·motor drive, DC-DC conver ter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM BOL PARAMETER VALUE UNIT VDSS Drai n-Source Voltage 900 V VGS Gate-Sou rce Voltage-Continuous ±30 V ID Dr ain Current-Continuous 6.
0 A IDM Dr ain Current-Single Pluse .
Manufacture Inchange Semiconductor
Datasheet
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2SK3676-01S

 

 

 


 

 

 

Part Number 2SK3676-01S
Description N-CHANNEL SILICON POWER MOSFET
Feature 2SK3676-01L,S,SJ FUJI POWER MOSFET 20030 4 N-CHANNEL SILICON POWER MOSFET Outli ne Drawings [mm] Super FAP-G Series Fe atures High speed switching Low on-resi stance No secondary breadown Low drivin g power Avalanche-proof Applications S witching regulators UPS (Uninterruptibl e Power Supply) DC-DC converters P4 M aximum ratings and characteristicAbsolu te maximum ratings (Tc=25°C unless oth erwise specified) Item Drain-source vol tage Continuous drain current Pulsed dr ain current Gate-source voltage Repetit ive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery .
Manufacture Fuji Electric
Datasheet
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2SK3676-01S

 

 

 

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