isc N-Channel MOSFET Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 160mΩ(Max) ·With low gate drive...
isc N-Channel
MOSFET Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 160mΩ(Max) ·With low gate drive requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGSS
Gate-Source
Voltage
±30
ID
Drain Current-Continuous
43
IDM
Drain Current-Single Pulsed
152
PD
Total Dissipation
600
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.21
UNIT ℃/W
2SK3681
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isc N-Channel
MOSFET Transistor
2SK3681
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID=0.25mA
3.0 3.5
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=26A
90
160
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward
voltage
VGS= ±30V;VDS= 0V
VDS= 600V; VGS= 0V;@Tc=25℃ VDS= 480V; VGS= 0V;Tc=125℃
ISD=43A, VGS = 0 V
±0.1 μA
25 250
μA
1.5
V
Ciss
Input Capacitance
2800 3200
pF
Coss
Output Capacitance
VDS=50V;VGS=0V; f=1.0MHz
97
pF
Crss
Reverse Transfer Capaci...
