www.DataSheet4U.com
2SK3686-01
FUJI POWER MOSFET
200311
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super F...
www.DataSheet4U.com
2SK3686-01
FUJI POWER
MOSFET
200311
N-CHANNEL SILICON POWER
MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
TO-220AB
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source
voltage Continuous drain current Pulsed drain current Gate-source
voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 600 VDSX 600 ID ±16 ID(puls] ±64 VGS ±30 IAS 16 EAS dV DS/dt dV/dt PD Tch Tstg 242.7 20 5 2.02 270 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/µs W °C °C Remarks VGS=-30V
Tch< =150°C L=1.74mH VCC =60V *1 VDS< =600V *2 Ta=25°C Tc=25°C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 See to Avalanche Energy Graph *2 IF < = 150°C = -ID, -di/dt=50A/µs, VCC < = BVDSS, Tch <
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown
voltaget Gate threshold
voltage Zero gate
voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source ...