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2SK3707 Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number 2SK3707
Description N-Channel MOSFET Transistor
Feature isc N-Channel MOSFET Transistor 2SK3707 FEATURES ·Drain Current : ID= 20A@ T C=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resi stance : RDS(on) = 60mΩ(Max) @ VGS= 10 V ·100% avalanche tested ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation DESCR IPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou rce Voltage 100 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 20 A IDM Drain Cu rrent-Single Pluse 80 A .
Manufacture Inchange Semiconductor
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Part Number 2SK3707
Description N-Channel Silicon MOSFET
Feature www.
DataSheet4U.
com Ordering number : E NN7706 2SK3707 2SK3707 Features


• N-Channel Silicon MOSFET G eneral-Purpose Switching Device Applica tions Low ON-resistance.
4V drive.
Mot or driver, DC / DC converter.
Avalanche resistance guarantee.
Specifications Absolute Maximum Ratings at Ta=25°C Pa rameter Drain-to-Source Voltage Gate-to -Source Voltage Drain Current (DC) Drai n Current (Pulse) Allowable Power Dissi pation Channel Temperature Storage Temp erature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VG SS ID IDP PD Tch Tstg EAS IAV PW≤10µ s, duty cycle≤1% Tc=25°C C .
Manufacture Sanyo Semicon Device
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Part Number 2SK3707
Description N-Channel Power MOSFET
Feature Ordering number : EN7706A 2SK3707 N-Cha nnel Power MOSFET 100V, 20A, 60mΩ, TO- 220F-3SG http://onsemi.
com Features
• ON-resistance RDS(on)1=45mΩ (typ.
)
• 4V drive
• Input capacitance Ci ss=2150pF (typ.
) Specifications Abso lute Maximum Ratings at Ta=25°C Param eter Symbol Drain-to-Source Voltage G ate-to-Source Voltage Drain Current (DC ) Drain Current (Pulse) VDSS VGSS ID I DP Allowable Power Dissipation PD Ch annel Temperature Tch Storage Tempera ture Tstg Avalanche Energy (Single Pu lse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=20V, L=500μH, IAV=20A ( Fig.
1) *2 L≤500μH, Single .
Manufacture ON Semiconductor
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