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2SK3707 Transistor Datasheet PDFN-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part Number | 2SK3707 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor
2SK3707
FEATURES ·Drain Current : ID= 20A@ T C=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resi stance
: RDS(on) = 60mΩ(Max) @ VGS= 10 V ·100% avalanche tested ·Minimum Lot -to-Lot variations for robust device
pe rformance and reliable operation
DESCR IPTION ·motor drive, DC-DC converter, power switch
and solenoid drive. ABSOL UTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sou rce Voltage 100 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 20 A IDM Drain Cu rrent-Single Pluse 80 A . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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| Part Number | 2SK3707 |
|---|---|
| Description | N-Channel Silicon MOSFET |
| Feature | www. DataSheet4U. com Ordering number : E NN7706 2SK3707 2SK3707 Features • • • N-Channel Silicon MOSFET G eneral-Purpose Switching Device Applica tions Low ON-resistance. 4V drive. Mot or driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Pa rameter Drain-to-Source Voltage Gate-to -Source Voltage Drain Current (DC) Drai n Current (Pulse) Allowable Power Dissi pation Channel Temperature Storage Temp erature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VG SS ID IDP PD Tch Tstg EAS IAV PW≤10µ s, duty cycle≤1% Tc=25°C C . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
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| Part Number | 2SK3707 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | Ordering number : EN7706A
2SK3707
N-Cha nnel Power MOSFET
100V, 20A, 60mΩ, TO- 220F-3SG
http://onsemi. com Features • ON-resistance RDS(on)1=45mΩ (typ. ) • 4V drive • Input capacitance Ci ss=2150pF (typ. ) Specifications Abso lute Maximum Ratings at Ta=25°C Param eter Symbol Drain-to-Source Voltage G ate-to-Source Voltage Drain Current (DC ) Drain Current (Pulse) VDSS VGSS ID I DP Allowable Power Dissipation PD Ch annel Temperature Tch Storage Tempera ture Tstg Avalanche Energy (Single Pu lse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=20V, L=500μH, IAV=20A ( Fig. 1) *2 L≤500μH, Single . |
| Manufacture | ON Semiconductor |
| Datasheet |
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