2SK3726-01MR

2SK3726-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200305 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol VDS Ratings 450 Unit V Continuous drain current ID ±3 A Pulsed drain current ID(puls] ±12 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 3 A Maximum Avalanche Energy EAS *1 92.8 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt Max. power dissipation dV/dt *3 PD Ta=25°C Tc=25°C 5 2.16 17 kV/µs W Operating and storage Tch temperature range Tstg +150 °C -55 to +150 °C Isolation Voltage VISO *6 2000 *1 L=18.9mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 450V Vrms *2 Tch =<150°C *6 f=60Hz, t=60sec. Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off ti...