2SK3731 Datasheet





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2SK3731 Datasheet - Power Device - Power MOS Fets

2SK3731   2SK3731  

Datasheet: 2SK3731 datasheet

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Description: Power MOSFETs 2SK3731 N-channel enhance ment mode MOSFET ■ Features • Low o n-resistance, low Qg • High avalanche resistance (1.4) Unit: mm 10.5±0.3 4 .6±0.2 1.4±0.1 0.6±0.1 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2 0 to 0.3 ■ Absolute www.Da taSheet4U.com Maximum Ratings TC = 25 C 1 2 3 (10.2) (8.9) (6.4) (1.4) Par ameter Drain-source surrender voltage G ate-source surrender voltage Drain curr ent Peak drain current Avalanche energy capability Power dissipation Ta = 25° C Channel temperature Storage temperatu re * Symbol VDSS VGSS ID IDP EAS PD Tc h Tstg Rating 230 ± 30 20 80 668 50 1 .4 150 − 55 to + 150 Unit V V A A mJ W (2.1) 1: Gate 2: D


Manufacture Part Number Description

Panasonic

2SK3731

Power Device - Power MOS Fets




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